{"date":"Wed Aug 19 10:46:38 2026","instrument":{"source_energy":"21.2","source_power":"","source":"synchrotron ","spectral_analyzers":"","detectors":{"detector":""},"name":"","comments":"","technique":"ARPES"},"user_id":"","experiments":{"variable_parameters_comments":"","comments":""},"uid":"b87777e39471e0d22345cde2e14b807b9102c8a8ee0ecd9bfcef20f4d826c524","experiment":{"variable_parameters_types":"temperature ","publication":{"citation":"10.1103%2FPhysRevB.86.195438 "},"types":{"type":"laboratory measurement "},"spectra":{"spectrum":{"analysis":"","reference_position":""}},"title":"Strained Ge%2FSi%28111%29-%285x5%29 surface","uid":"EXPERIMENT_2012-11-30_b87777e39471e0d22345cde2e14b807b9102c8a8ee0ecd9bfcef20f4d826c524","description":"","parameters_instrument":{"spectrum_scan_number":"","spectral":{"ranges":{"range":{"resolution":"10 meV","sampling":""}}},"spatial":{"extent_z":"","extent_x":"","extent_y":""},"polarization":""},"date_begin":"2012-11-30"},"datafiles":"Fig2_PRB_86_195438_Stoffel.jpg;","experimentalist":{"laboratories":{"laboratory":""},"family_name":"","email":""},"sample":{"name":"Strained Ge on Si%28111%29","comments":"","thickness":"","processings":{"processing_steps":"in-situ evaporation"},"parameters_environment":{"temperature":"RT"},"material":{"chemical_formula":"Ge%2FSi%28111%29","family":"","phase_name":""},"publication":{"citation":"10.1103%2FPhysRevB.86.195438 "},"substrate_material":"Si%28111%29"},"Submit":"Submit entry","url":"https://data-analysis.synchrotron-soleil.fr/sharpes/db/EXPERIMENT_2012-11-30_b87777e39471e0d22345cde2e14b807b9102c8a8ee0ecd9bfcef20f4d826c524","dataset":"Fig2_PRB_86_195438_Stoffel.jpg","database":"DB_sharpes"}